Room-temperature operation of a transistor vertical-cavity surface-emitting laser

X. Yu, Y. Xiang, J. Berggren, T. Zabel, M. Hammar, N.Akram, W. Shi and L. Chrostowski

We demonstrate the first room-temperature operation of a transistor vertical-cavity surface-emitting laser (T-VCSEL). Fabricated using an epitaxial regrowth process, the T-VCSEL is electrically a Pnp-type bipolar junction transistor and consists of an undoped AlGaAs/GaAs bottom DBR, an InGaAs triple-quantum-well (TQW) active layer, an Si/SiO2 dielectric top DBR, and an intracavity contacting scheme with three electrical terminals. The output power is controlled by the base current in combination with the emitter-collector voltage, showing a voltage-controlled operation mode. A low threshold base-current of 0.8 mA and an output power of 1.8 mW have been obtained at room temperature. Continuous-wave operation was performed up to 50°C .

 
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