The system comprises:
• A UHV linear e-beam source with six (6) 15cc crucibles
• Three (3) UHV magnetron sputtering sources for 2″ diameter targets
• One (1) UHV magnetron sputtering source on for 3″ diameter targets, with 6″ stroke adjustment that allows under 3″ substrate to target working distance
The system includes both RF and DC power supplies for sputtering and has co-sputtering and reactive sputtering capabilities.
This procedure explains, with some detail, how to obtain high quality silicon nitride and silicon dioxide films using the ANF PECVD tool. This process involves physical and plasma cleaning and a passivation/calibration deposition prior to deposition on the desired sample.
This is a high vacuum system expected to come online sometime in 2014. In this system, up to six various materials can be evaporated in a single process. A load-lock will allows samples to be loaded without exposing the main chamber to air thus greatly reducing pumpdown time. The film thickness is controlled during evaporation with a thickness monitor.