Room-temperature operation of a transistor vertical-cavity surface-emitting laser
X. Yu, Y. Xiang, J. Berggren, T. Zabel, M. Hammar, N.Akram, W. Shi and L. Chrostowski We demonstrate the first room-temperature operation of a transistor vertical-cavity surface-emitting laser (T-VCSEL). Fabricated using an epitaxial regrowth process, the T-VCSEL is electrically a Pnp-type bipolar junction transistor and consists of an undoped AlGaAs/GaAs bottom DBR, an InGaAs triple-quantum-well […]
