This is a dry etching system. It uses Xenon Difluoride for isotropic Silicon etch.
Operation:
Important: Wafer surfaces need to be dehydrated immediately prior to etching for about 5 minutes. Otherwise a thin silicon fluoride polymer layer forms due to a reaction with the water on the silicon. This can dramatically reduce the etch rate, or even stop it completely.
Process information can be found on manufacturer website
www.spts.com/uploaded_files/1193/images/XeF2-Intro-A4.pdf
www.spts.com/uploaded_files/1193/images/XeF2-Intro-A4.pdf
Superuser: Mario