AZ P4110 Process

Process Name:logo.ashx

Positive Photoresist Recipe using AZ P4110 photoresist


A. Schmalz and F. Sfigakis, (Rev. 00, April 24, 1998) – M. Beaudoin (Rev. 01, May 10, 2005/Rev. 02, July 3, 2008/Rev.03, April 2014)


To describe the positive photoresist recipe used in the AMPEL Nanofabrication Facility using the AZ P4110 Photoresist and matched AZ 400K developer diluted 1:4. AZ is a trademark of Clariant Corporation.

A. Wafer cleaning (optional)

1. 180 s hot acetone (set temperature by boiling point of acetone)
2. 180 s hot isopropanol (use same hotplate and hence temperature as boiling acetone)
3. Blowdry with the nitrogen gun
4. Alternately, other cleaning recipes can be found on the cleanroom website

B. HMDS priming (optional to promote photoresist adhesion). WARNING: waste HMDS needs to be disposed of in the appropriate waste bottle located in the yellow cabinet.

1. Pour out HMDS (hexa-methyl-di-silazane) from the 4L bottle into a small beaker. The bottle is kept in the flammables cabinet.
2. Set spinner control to 4000 rpm and 40 s
3. Using a clean disposable glass pipette, aspire HMDS from the beaker.
4. Dispense onto center of wafer (avoid bubbles).
5. Spin wafer
6. Allow to air dry for at least 1 min.

C. Photo Resist

1. Set Hot plate to 100 °C and wait until equilibrated (alternately, the ovens between 90-95 °C can be used instead); NB: this is a guideline.
2. Set spinner control to 5000 rpm and 40 s
3. Dispense AZ4110 photo resist (PR) onto center of wafer (avoid bubbles) using a disposable glass pipette

a. To dispense, use one of the small brown bottles and take it to the wetbench without disturbing the contents
b. Use a clean pipette and suck the photoresist from the top of the liquid: avoid taking it from the bottom of the bottle as deposits usually form there. Dispose of pipette in sharps container.

4. spin wafer
5. Swab wipe corners/edges with acetone to remove PR meniscus
6. Bake on Hotplate for 600 s (10 min).
7. Allow to cool for at least 3 min.

D. Photolithography

1. Place in Mask Aligner and Follow SOP for the chosen aligner
2. Exposure with UV 405 nm (Canon aligner), with 12 on light integra is typical for good results; each application needs to be optimized of course.
3. As a guideline for the Karl Suss aligner, exposure with UV 405 nm, 30 s, @ (150 mJ/ cm2) 5 mW/cm2 is typical for good results; the main line on the current MJB3 is at shorter wavelength but exposure energy should be similar for good results.

E. Develop using 1:4 AZ400K : DI water

1. 60-120 s
2. rinse in DI water
3. Blowdry with the nitrogen gun

Optional Steps
F. Hard bake

1. 1800 s at 120 °C
2. Can be done on hotplate or Blue M oven.

G. For Liftoff process

1. Softbake at 70°C for 10 minutes

2. Dip in chlorobenzene for 60s

3. Blowdry + 10 min air dry

4. Dispose of chlorobenzene in halogenated waste red can